UMH3N
TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:-; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-363; No. of Pins:6 Pin; Product Range:UMH3N Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on):300mV; Current Ic Continuous a Max:5mA; DC Collector Current:100mA; DC Current Gain hFE:250hFE; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; Module Configuration:Dual; No. of Pins:6Pins; Operating Temperature Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:150mW; Transistor Case Style:SOT-363; Transistor Polarity:NPN; Transistor Type:General Purpose; Transition Frequency ft:250MHz
Availability: Out of Stock
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Specifications for the UMH3N
Part Name | UMH3N |
Manufacturer | Yangjie Electronic Technology |
Formats Available for Symbols and Footprints |
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