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2N5461
TRANSISTOR JFET POLARITY P; Transistor Type:JFET; Breakdown Voltage Vbr:40V; Zero Gate Voltage Drain Current Idss:-2mA to -9mA; Gate-Source Cutoff Voltage Vgs(off) Max:7.5V; Power Dissipation Pd:350mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Idss Max:9mA; Current Idss Min:2mA; Current Ig:10mA; Device Marking:2N5461; Drain Source Voltage Vds:40V; No. of Transistors:1; Package / Case:TO-92; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; Termination Type:Through Hole; Transistor Polarity:P Channel
Availability: Out of Stock
Package Type: E-PKG AXIAL-LEADED-2
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Specifications for the 2N5461
| Part Name | 2N5461 |
| Manufacturer | Fairchild Semiconductor |
| Formats Available for Symbols and Footprints |
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