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BSC030P03NS3 G

Name: BSC030P03NS3 G
Brand: Infineon

P-Channel 30 V 25.4A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

Availability: In Stock

Package Type: PG-TDSON-8

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Specifications for the BSC030P03NS3 G

Part Name	BSC030P03NS3 G
Manufacturer	Infineon Technologies
RoHS	True
Formats Available for Symbols and Footprints	Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus
Datasheet	See Datasheet PDF
Maximum Drain Source Voltage (V)	30 V
Width	5.35 (mm)
Maximum Continuous Drain Current (A)	100 A
Mounting Type	Surface Mount
Maximum Gate Source Voltage (V)	-25 V, +25 V
Series	OptiMOS P
Channel Type	P
Maximum Power Dissipation	125 W
Height	1.1 (mm)
Channel Mode	Enhancement
Length	6.1 (mm)
Maximum Drain Source Resistance	4.6 mΩ
Typical Gate Charge Vgs	140 nC @ 10 V
Number Of Elements Per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage (V)	1.1 (V)
Package Type	TDSON
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Pin Count	8
Transistor Configuration	Single

Inventory for the BSC030P03NS3 G by Infineon from major distributors.

Supplier	Quantity	Price	Purchase
★ Featured	20,000	465 x $0.65		Visit Site
Mouser		5,000 x $0.98		Visit Site