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CSD19536KTT
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm
Availability: Out of Stock
Package Type: TO-263-3
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the CSD19536KTT
| Part Name | CSD19536KTT |
| Manufacturer | Texas Instruments |
| MOQ | 1 |
| RoHS | True |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Pin Count | 3 |
| Maximum Drain Source Voltage (V) | 100 V |
| Maximum Continuous Drain Current (A) | 272 A |
| Mounting Type | Surface Mount |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Series | NexFET |
| Maximum Power Dissipation | 375 W |
| Channel Mode | Enhancement |
| Height | 4.83 (mm) |
| Typical Gate Charge Vgs | 118 nC @ 0 V |
| Width | 9.65 (mm) |
| Length | 10.67 (mm) |
| Package Type | D2PAK (TO-263) |
| Number Of Elements Per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Forward Diode Voltage (V) | 1.1 (V) |
| Channel Type | N |
| Maximum Operating Temperature | +175 °C |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Transistor Configuration | Single |
Inventory for the CSD19536KTT by Texas Instruments from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
| Texas Instruments |
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