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CSD19537Q3
100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm
Availability: In Stock
Package Type: VSON-CLIP-8
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the CSD19537Q3
| Part Name | CSD19537Q3 |
| Manufacturer | Texas Instruments |
| MOQ | 1 |
| RoHS | True |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 53 A |
| Width | 3.4 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 100 V |
| Maximum Gate Threshold Voltage (V) | 3.6 (V) |
| Package Type | VSON-CLIP |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2.6 (V) |
| Maximum Operating Temperature | +150 °C |
| Channel Type | N |
| Length | 3.4 (mm) |
| Typical Gate Charge Vgs | 44 nC @ 10 V |
| Pin Count | 8 |
| Channel Mode | Enhancement |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 83 W |
| Series | NexFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 1.1 (mm) |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage (V) | 1 (V) |
| Maximum Drain Source Resistance | 16.6 mΩ |
Inventory for the CSD19537Q3 by Texas Instruments from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
| Texas Instruments |
26,792
|
|
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