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FDS6912A
MOSFET, DUAL, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:6A; Resistance, Rds On:0.035ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.9V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:1.6W; Power, Pd:1.6W; SMD Marking:FDS6912A; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Min:1V
Availability: Out of Stock
Package Type: SOIC-8
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the FDS6912A
| Part Name | FDS6912A |
| Manufacturer | ON |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Pin Count | 8 |
| Maximum Drain Source Voltage (V) | 30 V |
| Maximum Continuous Drain Current (A) | 6 A |
| Mounting Type | Surface Mount |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Series | PowerTrench |
| Maximum Power Dissipation | 1.6 W |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Height | 1.5 (mm) |
| Width | 4 (mm) |
| Length | 5 (mm) |
| Package Type | SOIC |
| Number Of Elements Per Chip | 2 |
| Minimum Operating Temperature | -55 °C |
| Minimum Gate Threshold Voltage (V) | 1 (V) |
| Typical Gate Charge Vgs | 5.8 nC @ 10 V |
| Channel Type | N |
| Maximum Operating Temperature | +150 °C |
| Maximum Drain Source Resistance | 44 mΩ |
| Transistor Configuration | Isolated |
No issues have been reported for the FDS6912A
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