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FGA60N65SMD
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube
Availability: In Stock
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| Verification | Issues | Specs | Pricing |
Specifications for the FGA60N65SMD
| Part Name | FGA60N65SMD |
| Manufacturer | onsemi |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Dimensions | 15.8 x 5 x 20.1 (mm) |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 600 W |
| Maximum Collector Emitter Voltage (V) | 650 V |
| Channel Type | N |
| Maximum Continuous Collector Current (A) | 120 A |
| Maximum Gate Emitter Voltage (V) | ±20 (V) |
| Package Type | TO-3PN |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Pin Count | 3 |
| Transistor Configuration | Single |
Inventory for the FGA60N65SMD by Onsemi from major distributors.
| Supplier | Quantity | Price | Purchase | |
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★ Featured
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| Onlinecomponents |
450
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No issues have been reported for the FGA60N65SMD
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