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IPP023N10N5
MOSFET N-Ch 100V 120A TO220 -3
Availability: In Stock
CAD Models: Symbol and Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the IPP023N10N5
| Part Name | IPP023N10N5 |
| Manufacturer | Infineon |
| RoHS | True |
| Life Cycle Status | Part Number Change |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 120 A |
| Transistor Material | Si |
| Width | 4.57 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 100 V |
| Maximum Gate Threshold Voltage (V) | 3.8 (V) |
| Package Type | TO-220 |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2.2 (V) |
| Maximum Operating Temperature | +175 °C |
| Channel Type | N |
| Length | 10.36 (mm) |
| Typical Gate Charge Vgs | 168 nC @ 10 V |
| Pin Count | 3 |
| Mounting Type | Through Hole |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Series | OptiMOSâ„¢ 5 |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 15.95 (mm) |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage (V) | 1.2 (V) |
| Maximum Drain Source Resistance | 2.8 mΩ |
Inventory for the IPP023N10N5 by Infineon from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
|
★ Featured
|
20,000
|
260 x $1.31
|
Visit Site |
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