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IPT60R028G7XTMA1
Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G | Enables best-in-class R DS(on) in smallest footprint
Availability: In Stock
Package Type: POWERSFN-8
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the IPT60R028G7XTMA1
| Part Name | IPT60R028G7XTMA1 |
| Manufacturer | Infineon Technologies |
| RoHS | True |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/500v-900v-coolmos-n-channel-power-mosfet/600v-coolmos-n-channel-power-mosfet/ipt60r028g7/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Drain Source Voltage (V) | 600 V |
| Channel Mode | Enhancement |
| Maximum Continuous Drain Current (A) | 75 A |
| Series | CoolMOSâ„¢ G7 |
| Channel Type | N |
| Maximum Gate Threshold Voltage (V) | 4 (V) |
| Package Type | HSOF-8 |
| Number Of Elements Per Chip | 1 |
| Pin Count | 8 |
| Mounting Type | Surface Mount |
| Transistor Material | Si |
| Maximum Drain Source Resistance | 28 mΩ |
Inventory for the IPT60R028G7XTMA1 by Infineon from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
| Avnet America |
2,000
|
|
Visit Site | |
| Chip One Stop |
266
|
1 x $9.57
|
Visit Site | |
| Farnell UK |
6
|
|
Visit Site | |
| Newark |
6
|
1 x $14.48
|
Visit Site | |
| RS UK |
|
2,000 x $9.46
|
Visit Site | |
| Rutronik |
20,000
|
2,000 x $11.40
|
Visit Site | |
| element14 Singapore |
6
|
|
Visit Site |
No issues have been reported for the IPT60R028G7XTMA1
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