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IRF1018EPBF
MOSFET, Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,TO-220AB,PD 110W,-55C | Infineon IRF1018EPBF
Availability: Out of Stock
Package Type: TO-220-3
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the IRF1018EPBF
| Part Name | IRF1018EPBF |
| Manufacturer | Infineon |
| Category | Electronic Components |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irf1018e/ |
| RoHS | True |
| Life Cycle Status | Part Number Change |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 79 A |
| Transistor Material | Si |
| Width | 4.83 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 60 V |
| Maximum Gate Threshold Voltage (V) | 4 (V) |
| Package Type | TO-220AB |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2 (V) |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Channel Type | N |
| Length | 10.67 (mm) |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 110 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 9.02 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 8 mΩ |
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