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IRF5210STRLPBF
MOSFET, Power,P-Ch,VDSS -100V,RDS(ON) 60 Milliohms,ID -38A,D2Pak,PD 170W,-55degc | Infineon IRF5210STRLPBF
Availability: In Stock
Package Type: D2PAK
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the IRF5210STRLPBF
| Part Name | IRF5210STRLPBF |
| Manufacturer | Infineon |
| Category | Electronic Components |
| RoHS | True |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 38 A |
| Transistor Material | Si |
| Width | 9.65 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 100 V |
| Maximum Gate Threshold Voltage (V) | 4 (V) |
| Package Type | D2PAK (TO-263) |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2 (V) |
| Maximum Operating Temperature | +150 °C |
| Channel Type | P |
| Length | 10.67 (mm) |
| Typical Gate Charge Vgs | 150 nC @ 10 V |
| Pin Count | 3 |
| Mounting Type | Surface Mount |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 170 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 4.83 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 60 mΩ |
Inventory for the IRF5210STRLPBF by Infineon from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
|
★ Featured
|
7,960
|
|
Visit Site | |
|
★ Featured
|
19,003
|
|
Visit Site | |
|
★ Featured
|
44,100
|
545 x $0.55
|
Visit Site | |
| Arrow Europe |
68,000
|
800 x $1.29
|
Visit Site | |
| RS Americas |
254
|
1 x $0.88
|
Visit Site | |
| Verical |
67
|
|
Visit Site |
No issues have been reported for the IRF5210STRLPBF
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