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IRF540N

Name: IRF540N
Brand: Infineon

Transistor NPN MOS IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220

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Specifications for the IRF540N

Part Name	IRF540N
Manufacturer	Infineon Technologies
RoHS	True
Formats Available for Symbols and Footprints	Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus
Datasheet	See Datasheet PDF
Maximum Continuous Drain Current (A)	33 A
Transistor Material	Si
Width	9.65 (mm)
Transistor Configuration	Single
Maximum Drain Source Voltage (V)	100 V
Maximum Gate Threshold Voltage (V)	4 (V)
Package Type	D2PAK (TO-263)
Number Of Elements Per Chip	1
Minimum Gate Threshold Voltage (V)	2 (V)
Maximum Operating Temperature	+175 °C
Channel Type	N
Length	10.67 (mm)
Typical Gate Charge Vgs	71 nC @ 10 V
Pin Count	3
Channel Mode	Enhancement
Mounting Type	Surface Mount
Maximum Power Dissipation	130 W
Series	HEXFET
Maximum Gate Source Voltage (V)	-20 V, +20 V
Height	4.83 (mm)
Minimum Operating Temperature	-55 °C
Maximum Drain Source Resistance	44 mΩ

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