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IRF7389
Mosfet Array N and P-Channel 30V - 2.5W Surface Mount 8-SO
Availability: Out of Stock
Package Type: SO-8
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the IRF7389
| Part Name | IRF7389 |
| Manufacturer | Infineon Technologies |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Maximum Continuous Drain Current (A) | 5.3 A, 7.3 A |
| Transistor Material | Si |
| Width | 4 (mm) |
| Transistor Configuration | Isolated |
| Maximum Drain Source Voltage (V) | 30 V |
| Maximum Gate Threshold Voltage (V) | 1 (V) |
| Package Type | SOIC |
| Number Of Elements Per Chip | 2 |
| Minimum Gate Threshold Voltage (V) | 1 (V) |
| Maximum Operating Temperature | +150 °C |
| Channel Type | N, P |
| Length | 5 (mm) |
| Typical Gate Charge Vgs | 22 nC @ 10 V, 23 nC @ 10 V |
| Pin Count | 8 |
| Channel Mode | Enhancement |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 2.5 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 1.5 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 46 mΩ, 98 mΩ |
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