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IRF7749L1TRPBF
RoHS Compliant | Qualified Industrial | Qualified MSL1 | Low Profile (less than 0.7 mm) | Dual Sided Cooling | Optimized for Synchronous Rectification | Low Conduction Losses | High Cdv/dt Immunity
Availability: Out of Stock
Package Type: DIRECTFET™-8
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| Verification | Issues | Specs | Pricing |
Specifications for the IRF7749L1TRPBF
| Part Name | IRF7749L1TRPBF |
| Manufacturer | Infineon |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irf7749l1/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Drain Source Voltage (V) | 60 V |
| Typical Gate Charge @ Vgs | 200 nC @ 10 V |
| Mounting Type | Surface Mount |
| Maximum Continuous Drain Current (A) | 375 A |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Series | DirectFET, HEXFET |
| Maximum Power Dissipation | 125 W |
| Channel Mode | Enhancement |
| Height | 0.49 (mm) |
| Width | 7.1 (mm) |
| Length | 9.15 (mm) |
| Package Type | DirectFET ISOMETRIC |
| Number Of Elements Per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Forward Diode Voltage (V) | 1.3 (V) |
| Channel Type | N |
| Maximum Operating Temperature | +175 °C |
| Maximum Drain Source Resistance | 1.5 mΩ |
| Transistor Configuration | Single |
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