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IRF830
N-Chan 500V 4.5 Amp | Siliconix / Vishay IRF830
Availability: Out of Stock
Package Type: TO-220-3
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the IRF830
| Part Name | IRF830 |
| Manufacturer | Vishay Siliconix |
| Category | Electronic Components |
| RoHS | True |
| Life Cycle Status | Obsolete |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Drain Source Voltage (V) | 500 V |
| Maximum Continuous Drain Current (A) | 5 A |
| Mounting Type | Surface Mount |
| Maximum Gate Source Voltage (V) | -30 V, +30 V |
| Maximum Power Dissipation | 3.1 W |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Height | 4.83 (mm) |
| Width | 9.65 (mm) |
| Length | 10.67 (mm) |
| Maximum Drain Source Resistance | 1.4 Ω |
| Package Type | D2PAK (TO-263) |
| Number Of Elements Per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Minimum Gate Threshold Voltage (V) | 2 (V) |
| Typical Gate Charge Vgs | 24 nC @ 10 V |
| Channel Type | N |
| Maximum Operating Temperature | +150 °C |
| Pin Count | 3 |
| Transistor Configuration | Single |
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