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IRFB7530PBF
IRFB7530PBF N-channel MOSFET Transistor, 195 A, 60 V, 3-Pin TO-220AB | Infineon IRFB7530PBF
Availability: Out of Stock
Package Type: TO-220-3
CAD Models: Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the IRFB7530PBF
| Part Name | IRFB7530PBF |
| Manufacturer | Infineon Technologies |
| Category | Electronic Components |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irfb7530/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 195 A |
| Transistor Material | Si |
| Width | 4.83 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 60 V |
| Maximum Gate Threshold Voltage (V) | 3.7 (V) |
| Package Type | TO-220AB |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 2.1 (V) |
| Maximum Operating Temperature | +175 °C |
| Channel Type | N |
| Length | 10.67 (mm) |
| Typical Gate Charge Vgs | 274 nC @ 10 V |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 375 W |
| Series | StrongIRFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 16.51 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 2 mΩ |
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