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IRFP4668PBF
MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free | Infineon IRFP4668PBF
Availability: Out of Stock
Package Type: TO-247-3
CAD Models: Symbol, Footprint, 3D Model
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| Verification | Issues | Specs | Pricing |
Specifications for the IRFP4668PBF
| Part Name | IRFP4668PBF |
| Manufacturer | Infineon Technologies |
| Category | Electronic Components |
| Life Cycle Status | Part Number Change |
| RoHS | True |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irfp4668/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 130 A |
| Transistor Material | Si |
| Width | 5.31 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 200 V |
| Maximum Gate Threshold Voltage (V) | 5 (V) |
| Package Type | TO-247AC |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 3 (V) |
| Maximum Operating Temperature | +175 °C |
| Channel Type | N |
| Length | 15.87 (mm) |
| Typical Gate Charge Vgs | 161 nC @ 10 V |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Mounting Type | Through Hole |
| Maximum Power Dissipation | 520 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -30 V, +30 V |
| Height | 20.7 (mm) |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage (V) | 1.3 (V) |
| Maximum Drain Source Resistance | 10 mΩ |
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Related Questions
The drain and source position is opposite
Don't use this footprint. the position of drain and soure is wrong.
Added 1Â year, 8Â months ago.
No issues have been reported for the IRFP4668PBF
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