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IRFZ24N

Name: IRFZ24N
Brand: Infineon

N-Channel 55V 17A (Tc) 3.8W (Ta), 45W (Tc) Through Hole TO-262

Availability: Out of Stock

Package Type: TO-220

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Specifications for the IRFZ24N

Part Name	IRFZ24N
Manufacturer	Infineon
Formats Available for Symbols and Footprints	Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus
Maximum Drain Source Voltage (V)	55 V
Maximum Continuous Drain Current (A)	17 A
Mounting Type	Through Hole
Maximum Gate Source Voltage (V)	-20 V, +20 V
Series	HEXFET
Channel Type	N
Maximum Power Dissipation	45 W
Transistor Material	Si
Channel Mode	Enhancement
Maximum Gate Threshold Voltage (V)	4 (V)
Maximum Drain Source Resistance	70 mΩ
Package Type	TO-220AB
Number Of Elements Per Chip	1
Minimum Operating Temperature	-55 °C
Minimum Gate Threshold Voltage (V)	2 (V)
Typical Gate Charge Vgs	20 nC @ 10 V
Height	8.77 (mm)
Maximum Operating Temperature	+175 °C
Pin Count	3
Transistor Configuration	Single

Inventory for the IRFZ24N by Infineon from major distributors.

Supplier	Quantity	Price	Purchase
Mouser		N/A		Visit Site