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IRLL2705TRPBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.04Ohm,ID 3.8A,SOT-223,PD 1W,VGS+/-16V,-55C | Infineon IRLL2705TRPBF
Availability: Out of Stock
Package Type: SOT-223
CAD Models: Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the IRLL2705TRPBF
| Part Name | IRLL2705TRPBF |
| Manufacturer | Infineon Technologies |
| Category | Electronic Components |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irll2705/ |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 5.2 A |
| Transistor Material | Si |
| Width | 3.7 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 55 V |
| Maximum Gate Threshold Voltage (V) | 2 (V) |
| Package Type | SOT-223 |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 1 (V) |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 32 nC @ 10 V |
| Channel Type | N |
| Length | 6.7 (mm) |
| Pin Count | 3 |
| Channel Mode | Enhancement |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 2.1 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -16 V, +16 V |
| Height | 1.739 (mm) |
| Minimum Operating Temperature | -55 °C |
| Maximum Drain Source Resistance | 65 mΩ |
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