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SI1308EDL-T1-GE3 by Vishay

SI1308EDL-T1-GE3

Si1308EDL-T1-GE3 N-channel MOSFET Transistor, 1.5 A, 30 V, 3-Pin SC-70 | Siliconix / Vishay SI1308EDL-T1-GE3

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Package Type:  SOT-323

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Part Name SI1308EDL-T1-GE3
Manufacturer Vishay Siliconix
Category Electronic Components
Formats Available for
Symbols and Footprints		 Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus
Datasheet See Datasheet PDF
Maximum Drain Source Voltage (V) 30 V
Typical Gate Charge @ Vgs 1.4 nC @ 4.5 V
Mounting Type Surface Mount
Maximum Continuous Drain Current (A) 1.5 A
Maximum Gate Source Voltage (V) -12 V, +12 V
Channel Type N
Maximum Power Dissipation 400 mW
Channel Mode Enhancement
Transistor Material Si
Width 1.35 (mm)
Length 2.2 (mm)
Maximum Drain Source Resistance 185 mΩ
Package Type SOT-323
Number Of Elements Per Chip 1
Minimum Operating Temperature -55 °C
Minimum Gate Threshold Voltage (V) 0.6 (V)
Height 1 (mm)
Maximum Operating Temperature +150 °C
Pin Count 3
Transistor Configuration Single

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