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SIA449DJ-T1-GE3
SIA449DJ-T1-GE3 P-channel MOSFET Transistor, 10.4 A, 30 V, 6-Pin SC-70 | Siliconix / Vishay SIA449DJ-T1-GE3
Availability: Out of Stock
Package Type: SC-70-6
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| Verification | Issues | Specs | Pricing |
Specifications for the SIA449DJ-T1-GE3
| Part Name | SIA449DJ-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Electronic Components |
| RoHS | True |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Pin Count | 6 |
| Maximum Drain Source Voltage (V) | 30 V |
| Maximum Continuous Drain Current (A) | 10.4 A |
| Mounting Type | Surface Mount |
| Maximum Gate Source Voltage (V) | -12 V, +12 V |
| Series | TrenchFET |
| Maximum Power Dissipation | 19 W |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Height | 0.8 (mm) |
| Width | 2.15 (mm) |
| Length | 2.15 (mm) |
| Package Type | SOT-363 |
| Number Of Elements Per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Minimum Gate Threshold Voltage (V) | 0.6 (V) |
| Typical Gate Charge Vgs | 48 nC @ 10 V |
| Channel Type | P |
| Maximum Operating Temperature | +150 °C |
| Maximum Drain Source Resistance | 38 mΩ |
| Transistor Configuration | Single |
No issues have been reported for the SIA449DJ-T1-GE3
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