
SISH129DN-T1-GE3
MOSFET, P-CH, -30V, -35A, 150DEG C; Transistor Polarity: P Channel; Continuous Drain Current Id: -35A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.8V; Power Dissipation Pd: 52.1W; Transistor Case Style: PowerPAK 1212; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Availability: Out of Stock
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Specifications for the SISH129DN-T1-GE3
Part Name | SISH129DN-T1-GE3 |
Manufacturer | Vishay Intertechnology |
Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
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