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STP18N55M5
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in TO-220 package
Availability: Out of Stock
Package Type: TO-220-3
CAD Models: Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the STP18N55M5
| Part Name | STP18N55M5 |
| Manufacturer | STMicroelectronics |
| RoHS | True |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Drain Source Voltage (V) | 550 V |
| Maximum Continuous Drain Current (A) | 13 A |
| Mounting Type | Through Hole |
| Maximum Gate Source Voltage (V) | -25 V, +25 V |
| Series | MDmesh M5 |
| Maximum Power Dissipation | 90 W |
| Transistor Material | Si |
| Maximum Gate Threshold Voltage (V) | 5 (V) |
| Channel Mode | Enhancement |
| Height | 15.75 (mm) |
| Width | 4.6 (mm) |
| Length | 10.4 (mm) |
| Package Type | TO-220 |
| Number Of Elements Per Chip | 1 |
| Pin Count | 3 |
| Minimum Gate Threshold Voltage (V) | 3 (V) |
| Typical Gate Charge Vgs | 31 nC @ 10 V |
| Channel Type | N |
| Maximum Operating Temperature | +150 °C |
| Maximum Drain Source Resistance | 240 mΩ |
| Transistor Configuration | Single |
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